IPP072N10N3G 查看數據表（PDF） - Infineon Technologies

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IPP072N10N3G

OptiMOS®3 Power-Transistor

Infineon Technologies 

IPP072N10N3 G IPI072N10N3 G

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case

Thermal resistance,

junction - ambient

R thJC

R thJA

minimal footprint

6 cm2 cooling area3)

min.

Values

typ.

Unit

max.

-

-

1 K/W

-

-

62

-

-

40

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

100

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=90 µA

2

2.7

3.5

Zero gate voltage drain current

I DSS

V DS=100 V, V GS=0 V,

T j=25 °C

-

0.1

1 µA

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

V DS=100 V, V GS=0 V,

T j=125 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on) V GS=10 V, I D=80 A

-

V GS=6 V, I D=40 A

-

RG

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=80 A

50

10

100

1

100 nA

6.2

7.2 mΩ

7.6

12.7

1.6

-Ω

99

-S

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.1

page 2

2008-10-21

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