IPI072N10N3G 查看數據表（PDF） - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
IPI072N10N3G Datasheet PDF : 10 Pages
| |||
IPP072N10N3 G IPI072N10N3 G
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=80 A; V GS=10 V
16
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
14
3.5
12
10
98 %
8
typ
6
3
900 µA
2.5
90 µA
2
1.5
4
1
2
0.5
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
Ciss
103
Coss
102
Crss
175 °C, 98%
102
25 °C
175 °C
25 °C, 98%
101
101
0
Rev. 2.1
20
40
60
V DS [V]
100
80
0
page 6
0.5
1
1.5
V SD [V]
2
2008-10-21
Share Link: 