IPI072N10N3G 查看數據表（PDF） - Infineon Technologies
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IPI072N10N3G Datasheet PDF : 10 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
100
IPP072N10N3 G IPI072N10N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=80 A pulsed
parameter: V DD
10
150 °C
25 °C
100 °C
10
8
80 V
50 V
6
20 V
4
2
1
0
1
10
100
1000
0
20
40
60
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
110
V GS
Qg
105
100
V g s(th)
95
Q g(th)
90
-60 -20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.1
page 7
Q sw
Q gd
Q gate
2008-10-21
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