SPN02N60S5 查看數據表（PDF） - Infineon Technologies

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产品描述 (功能)

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SPN02N60S5

Cool MOS™ Power Transistor

Infineon Technologies 

SPN02N60S5

9 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SPN02N60S5

720

V

10 Typ. capacitances

C = f (VDS)

parameter: VGS=0V, f=1 MHz

10 4

pF

680

660

640

620

600

580

560

540

-60 -20

20

60 100 °C

180

Tj

10 3

Ciss

10 2

10 1

Coss

10 0

0

Crss

10 20 30 40 50 60 70 80 V 100

VDS

Definition of diodes switching characteristics

Rev. 2.1

Page 7

2004-03-30

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