ZXT12P40DX 查看數據表（PDF） - Zetex => Diodes

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ZXT12P40DX

SuperSOT4™ DUAL 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Zetex => Diodes 

ZXT12P40DX

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO -50

-95

V

IC=-100␮A

Collector-Emitter Breakdown

Voltage

V(BR)CEO -40

-80

V

IC=-10mA*

Emitter-Base Breakdown Voltage V(BR)EBO -7.5

Collector Cut-Off Current

ICBO

Emitter Cut-Off Current

IEBO

Collector Emitter Cut-Off Current ICES

Collector-Emitter Saturation

Voltage

VCE(sat)

Base-Emitter Saturation Voltage VBE(sat)

Base-Emitter Turn-On Voltage

VBE(on)

Static Forward Current Transfer hFE

300

Ratio

300

150

10

Transition Frequency

fT

-8.5

-100

-100

-100

-18

-155

-190

-150

-22

-215

-260

-190

-0.92 -1.0

-0.80 -0.85

450

450

900

300

25

130

V

nA

nA

nA

mV

mV

mV

mV

V

V

MHz

IE=-100␮A

VCB=-40V

VEB=-6V

VCES=-40V

IC=-0.1A, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-2A, IB=-100mA*

IC=-2A, IB=-200mA*

IC=-2A, IB=-100mA*

IC=-2A, VCE=-2V*

IC=-10mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-5A, VCE=-2V*

IC=-30mA, VCE=-10V

f=-50MHz

Output Capacitance

Cobo

35

Turn-On Time

t(on)

97

Turn-Off Time

t(off)

640

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

pF

VCB=-10V, f=1MHz

ns

VCC=-10V, IC=-1A

IB1=IB2=-20mA

ns

ISSUE 2 - DECEMBER 2006

4

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