2SD21340RA 查看數據表（PDF） - Panasonic Corporation
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2SD21340RA Datasheet PDF : 3 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2134
Silicon NPN epitaxial planar type
For low-frequency driver , high power amplification
Complementary to 2SB1414
7.5±0.2
Unit: mm
4.5±0.2
■ Features
/ • Excellent collector current IC characteristics of forward current
transfer ratio hFE
e • High transition frequency fT
. • A complementary pair with 2SB1414, is optimum for the driver-
c tage stage of a 60 W to 100 W output amplifier.
n d cle s ■ Absolute Maximum Ratings Ta = 25°C
a e lifecy Parameter
Symbol Rating
Unit
t Collector-base voltage (Emitter open) VCBO
150
V
n u duc Collector-emitter voltage (Base open) VCEO
150
V
Pro Emitter-base voltage (Collector open) VEBO
5
V
te tin ur Collectorcurrent
IC
1
A
g fo e . Peak collector current
ICP
1.5
A
win typ tion Collector power dissipation
PC
1.5
W
in n follo ance pe ed rma Junction temperature
Tj
150
°C
es ten ty typ fo / Storage temperature
Tstg −55 to +150 °C
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
a coued inclnuedd maiinntenancoentinuedd type t latest in.co.jp/en ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tin la a c e u ic Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu abo son Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
150
V
iscon ned con RL ana Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
V
/D pla dis g U n.p Forward current transfer ratio
hFE1 * VCE = 10 V, IC = 150 mA
90
220
e in ico hFE2 VCE = 5 V, IC = 500 mA
50
Danc llow em Collector-emitter saturation voltage
VCE(sat) IC = 500 mA, IB = 50 mA
0.5 2.0
V
ten fo .s Base-emitter saturation voltage
VBE(sat) IC = 500 mA, IB = 50 mA
1.0 2.0
V
in isit ww Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Ma e v ://w Collector output capacitance
as ttp (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
20
pF
Ple h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
90 to 155 130 to 220
Publication date: February 2003
SJD00245BED
1
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