2SD2656T106(2013) 查看數據表（PDF） - ROHM Semiconductor
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2SD2656T106 Datasheet PDF : 7 Pages
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2SD2656
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
30
V
30
V
6
V
1
A
2
A
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Min.
Collector-emitter
breakdown voltage
BVCEO IC = 1mA
30
Collector-base
breakdown voltage
BVCBO IC = 10mA
30
Emitter-base
breakdown voltage
BVEBO IE = 10mA
6
Collector cut-off current
ICBO VCB = 30V
-
Emitter cut-off current
IEBO VEB = 6V
-
Collector-emitter
saturation voltage
VCE(sat) IC = 500mA, IB = 25mA -
DC current gain
hFE
VCE = 2V, IC = 100mA *3 270
Transition frequency
Output capacitance
fT
VCE = 2V, IE = -100mA
f=100MHZ *3
-
Cob
VCB = 10V, IE = 0mA
f = 1MHz
-
*1 PW=1ms Single pulse.
*2 Each terminal mounted on a reference footprint
*3 Pulsed
Typ.
-
-
-
-
-
140
-
400
5
Max.
-
-
-
100
100
350
680
-
-
Unit
V
V
V
nA
nA
mV
-
MHz
pF
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2013.04 - Rev.B
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