2SD2656(2013) 查看數據表（PDF） - ROHM Semiconductor

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2SD2656
(Rev.:2013)

NPN 1A 30V Low Frequency Amplifier Transistors

ROHM Semiconductor 

2SD2656

lElectrical characteristic curves(Ta = 25°C)

Data Sheet

Fig.5 Collector-Emitter Saturation Voltage

vs. Collector Current (I)

1

IC / IB = 20

Pulsed

Ta=100ºC

0.1

25ºC

-40ºC

0.01

Fig.6 Collector-Emitter Saturation Voltage

vs. Collector Current (II)

10

Ta=25ºC

Pulsed

1

IC / IB = 50

20

10

0.1

0.001

1

10

100

1000

COLLECTOR CURRENT : IC [mA]

0.01

1

10

100

1000

COLLECTOR CURRENT : IC [mA]

Fig.7 Base-Emitter Saturation Voltage

vs. Collector Current

10

IC / IB = 20

Pulsed

Ta=-40ºC

25ºC

125ºC

1

Fig.8 Gain Bandwidth Product

vs. Emitter Current

0.1

1

10

100

1000

COLLECTOR CURRENT : IC [mA]

EMITTER CURRENT :IE [A]

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4/6

2013.04 - Rev.B

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