2SD2620G0L 查看數據表（PDF） - Panasonic Corporation
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2SD2620G0L Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2620G
Silicon NPN epitaxial planar type
For low-frequency driver amplification
■ Features
• High forward current transfer ratio hFE
/ • Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
e e. ■ Absolute Maximum Ratings Ta = 25°C
c tag Parameter
Symbol Rating
Unit
n d le s Collector-base voltage (Emitter open) VCBO
100
V
yc Collector-emitter voltage (Base open) VCEO
100
V
a e lifec Emitter-base voltage (Collector open) VEBO
15
V
ct Collector current
IC
20
mA
n u du Peak collector current
ICP
50
mA
Pro Collector power dissipation
PC
125
mW
te tin four Junctiontemperature
Tj
125
°C
ing type n. Storage temperature
Tstg −55 to +125 °C
■ Package
• Code
SSMini3-F3
• Marking Symbol: 3B
• Pin Name
1: Base
2: Emitter
3: Collector
ain onludes foilnlotwenanceetype typed informatnio/ ■ Electrical Characteristics Ta = 25°C ± 3°C
c ed inc ed ma tenanc tinued type test .jp/e Parameter
Symbol
Conditions
Min Typ Max Unit
u n in on d t la .co Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
M is tin la a isc ue ou nic Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
p m d tin ab so Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
iscon ned con RL ana Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
/D pla dis g U n.p Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
e in ico Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
400
Danc llow em Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
inten it fo w.s Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Ma e vis ://ww Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
0.1
1.0
1 200
0.05 0.20
200
80
V
V
V
µA
µA
V
MHz
mV
Pleas http Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00409AED
1
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