2SD2621G 查看數據表（PDF） - Panasonic Corporation
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2SD2621G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2621G
Silicon NPN epitaxial planar type
For low-frequency driver amplification
■ Features
■ Package
• High forward current transfer ratio hFE
• Code
• Low collector-emitter saturation voltage VCE(sat)
SSSMini3-F2
• High emitter-base voltage (Collector open) VEBO
• Marking Symbol: 3B
• Pin Name
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
/ Collector-base voltage (Emitter open) VCBO
100
V
1: Base
2: Emitter
3: Collector
e Collector-emitter voltage (Base open) VCEO
100
V
c type) Emitter-base voltage (Collector open) VEBO
15
V
n d ge. ed Collector current
IC
20
mA
le sta ntinu Peak collector current
ICP
50
mA
a e cyc isco Collector power dissipation
PC
100
mW
life d, d Junction temperature
Tj
125
°C
n u duct type Storage temperature
Tstg −55 to +125 °C
te tinwing foudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
in n follo ned Parameter
Symbol
Conditions
Min Typ Max Unit
des , pla Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
100
a o inclu type Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
100
c ued nce Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
M is ntin tena Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0
/Disco main Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0
ce pe, Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
400
D tenan ce ty Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
ain nan Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
Mmainte Noise voltage
NV VCE = 10 V, IC = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
0.1
1.0
1 200
0.05 0.20
200
80
V
V
V
µA
µA
V
MHz
mV
(planed Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00410AED
1
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