STF6N60M2 查看數據表（PDF） - STMicroelectronics

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STF6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

Figure 14. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

AM15882v1

1.1

ID=250 µA

1.0

0.9

0.8

0.7

-50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

VSD

AM15884v1

(V)

1.4

1.2

TJ=-50°C

1

0.8

0.6

TJ=150°C

0.4

TJ=25°C

0.2

0

0

1

2

3

4 ISD(A)

STF6N60M2, STP6N60M2, STU6N60M2

Figure 15. Normalized on-resistance vs

temperature

RDS(on)

(norm)

AM15883v1

VGS=10 V

2.3

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

-50 -25 0 25 50 75 100 TJ(°C)

8/18

DocID024771 Rev 2

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