PHPT60606NY 查看數據表（PDF） - NXP Semiconductors.

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PHPT60606NY

60 V, 6 A NPN high power bipolar transistor

NXP Semiconductors. 

PHPT60606NY

60 V, 6 A NPN high power bipolar transistor

8 December 2014

Product data sheet

1. General description

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device

(SMD) power plastic package.

PNP complement: PHPT60606PY

2. Features and benefits

• High thermal power dissipation capability

• High temperature applications up to 175 °C

• Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• AEC-Q101 qualified.

3. Applications

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications

• Relay replacement

• Motor drive

4. Quick reference data

Table 1.

Symbol

VCEO

IC

ICM

RCEsat

Quick reference data

Parameter

Conditions

collector-emitter

voltage

open base

collector current

peak collector current

collector-emitter

saturation resistance

single pulse; tp ≤ 1 ms

IC = 6 A; IB = 600 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

Min Typ Max Unit

-

-

60

V

-

-

6

A

-

-

14

A

-

34

45

mΩ

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