NXP Semiconductors
6
Ptot
(1)
(W)
4
(2)
2
(3)
PHPT60606NY
60 V, 6 A NPN high power bipolar transistor
aaa-014785
0
-75
25
Fig. 1.
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Power derating curves
125
225
Tamb (°C)
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-mb)
thermal resistance
from junction to
mounting base
Min Typ Max Unit
[1]
-
-
111 K/W
[2]
-
-
46
K/W
[3]
-
-
30
K/W
-
-
6
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PHPT60606NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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