SMP80MC-160(2005) 查看數據表（PDF） - STMicroelectronics
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SMP80MC-160 Datasheet PDF : 9 Pages
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Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a) Junction to ambient (with recommended footprint)
Rth(j-l) Junction to leads
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
SMP80MC
Value
100
20
Unit
°C/W
°C/W
IRM @ VRM
IR @ VR
Types
max.
max.
note1
µA
V
µA
V
SMP80MC-120
108
120
SMP80MC-140
126
140
SMP80MC-160
SMP80MC-200
144
160
2
5
180
200
SMP80MC-230
207
230
SMP80MC-270
243
270
Note 1: IR measured at VR guarantee VBR min ≥ VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: VR = 50V bias, VRMS=1V, F=1MHz
Note 6: VR = 2V bias, VRMS=1V, F=1MHz
Dynamic
Static
VBO
VBO @ IBO
IH
C
C
max. max. max. min. typ. typ.
note 2
note 3 note 4 note 5 note 6
V
V mA mA pF pF
155
155
180
180
205
205
800 150 12 25
255
255
295
295
345
345
3/9
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