MCP6N16-010E 查看數據表（PDF） - Microchip Technology

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MCP6N16-010E

Zero-Drift Instrumentation Amplifier

Microchip Technology 

TABLE 1-2: AC ELECTRICAL SPECIFICATIONS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = 1.8V to 5.5V, VSS = GND, VCM = VDD/2, VDM = 0V, VREF = VDD/2, VL = VDD/2,

RL = 10 kΩ to VL, CL = 60 pF, GDM = GMIN and EN = VDD; see Figures 1-7 and 1-8.

Parameters

Sym.

Min. Typ. Max. Units GMIN

Conditions

Noise

Input Noise Voltage Density

eni

—

900

— nV/√Hz 1 f = 500 Hz

—

105

—

10

—

45

—

100

Input Noise Voltage

Eni

—

19

— µVP-P 1 f = 0.1 Hz to 10 Hz

—

2.2

—

10

—

0.93

—

100

—

5.9

—

1 f = 0.01 Hz to 1 Hz

—

0.69

—

10

—

0.30

—

100

Input Current Noise Density

Output Noise Voltage Density

Output Noise Voltage

Amplifier Distortion (Note 2)

ini

—

7

— fA/√Hz all f = 1 kHz

eno

0

nV/√Hz

Eno

0

µVP-P

Intermodulation Distortion (AC)

EMI Protection

IMD

—

5

— µVPK all VCM tone = 100 mVPK at 100 Hz

EMI Rejection Ratio

EMIRR

—

103

—

dB

all VIN = 0.1 VPK, f = 400 MHz

—

106

—

VIN = 0.1 VPK, f = 900 MHz

—

106

—

VIN = 0.1 VPK, f = 1800 MHz

—

111

—

VIN = 0.1 VPK, f = 2400 MHz

Note 1: The slew rate is limited by the GBWP; the large signal step response is dominated by the small signal bandwidth.

2: These parameters were characterized using the circuit in Figure 1-8. In Figures 2-75 and 2-76, there is an IMD tone at DC, a residual tone at 100 Hz and

other IMD tones and clock tones.

3: High gains behave differently; see Section 4.4.4 “Offset at Power-Up”.

4: tSTR, tSTL, tIRC, tIRD and tOR include some uncertainty due to clock edge timing.

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