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MCP6N16T-001 查看數據表(PDF) - Microchip Technology

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MCP6N16T-001
Microchip
Microchip Technology Microchip
MCP6N16T-001 Datasheet PDF : 58 Pages
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TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = 1.8V to 5.5V, VSS = GND, VCM = VDD/2, VDM = 0V, VREF = VDD/2, VL = VDD/2,
RL = 10 kto VL, CL = 60 pF, GDM = GMIN and EN = VDD; see Figures 1-7 and 1-8.
Parameters
Sym.
Min. Typ. Max. Units GMIN
Conditions
AC Response
Gain-Bandwidth Product
GBWP
0.5
— MHz 1
5
10
35
100
Phase Margin
PM
70
°
all
Open-Loop Output Impedance
Power Supply Rejection Ratio
ROL
PSRR
1.6
— k
80
— dB
1 f = 1 kHz
98
10
123
100
Common Mode Rejection Ratio CMRR, CMRR2 —
83
— dB
1 f = 10 kHz
at VCM and VREF
80
10
140
100
Step Response (see Section 4.1.4 “AC Performance”)
Slew Rate
SR
Note 1
V/µs all
Start-Up Time
tSTR
2
— ms
1 GDM = 1000, VDD power up to 0.1% VOUT settling (Note 3, Note 4)
0.3
10
0.2
100
Overdrive Recovery,
Input Common Mode
tIRC
1
µs
all VIP =VIM = VIVH + 0.5V to VDD – 1V (or VIVL – 0.5V to 1V),
90% of VOUT change (IB 2 mA) (Note 4)
Overdrive Recovery,
Input Differential Mode
tIRD
10
GMINVDM = GMINVDMH + 0.5V to 0V (or GMINVDML – 0.5V to 0V),
VREF = 1V (or VDD – 1V), 90% of VOUT change (Note 4)
Overdrive Recovery, Output
tOR
180
GDMVDM = 1.5V to 0V (or -1.5V to 0V),
VREF = VDD – 1V (or 1V), 90% of VOUT change (Note 4)
Note 1: The slew rate is limited by the GBWP; the large signal step response is dominated by the small signal bandwidth.
2: These parameters were characterized using the circuit in Figure 1-8. In Figures 2-75 and 2-76, there is an IMD tone at DC, a residual tone at 100 Hz and
other IMD tones and clock tones.
3: High gains behave differently; see Section 4.4.4 “Offset at Power-Up”.
4: tSTR, tSTL, tIRC, tIRD and tOR include some uncertainty due to clock edge timing.

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