74HCT00BQ-Q100(2012) 查看數據表（PDF） - NXP Semiconductors.
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74HCT00BQ-Q100 Datasheet PDF : 15 Pages
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NXP Semiconductors
74HC00-Q100; 74HCT00-Q100
Quad 2-input NAND gate
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min Max Unit
VCC
supply voltage
IIK
input clamping current
IOK
output clamping current
IO
output current
VI < 0.5 V or VI > VCC + 0.5 V
VO < 0.5 V or VO > VCC + 0.5 V
0.5 V < VO < VCC + 0.5 V
0.5 +7
V
[1] -
20 mA
[1] -
20 mA
-
25 mA
ICC
IGND
Tstg
Ptot
supply current
ground current
storage temperature
total power dissipation
-
50
65
[2] -
50
mA
-
mA
+150 C
500 mW
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C.
For TSSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C.
For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C.
8. Recommended operating conditions
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
Conditions
VCC
VI
VO
Tamb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
74HC00-Q100
Min Typ
2.0 5.0
0
-
0
-
40 +25
-
-
-
1.67
-
-
Max
6.0
VCC
VCC
+125
625
139
83
74HCT00-Q100
Min Typ Max
4.5 5.0 5.5
0
-
VCC
0
-
VCC
40 +25 +125
-
-
-
-
1.67 139
-
-
-
Unit
V
V
V
C
ns/V
ns/V
ns/V
74HC_HCT00_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 July 2012
© NXP B.V. 2012. All rights reserved.
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