EMD6(2013) 查看數據表（PDF） - ROHM Semiconductor

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EMD6
(Rev.:2013)

NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMD6 / UMD6N / IMD6A

lAbsolute maximum ratings (Ta = 25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

EMD6 / UMD6N

Collector Power dissipation

IMD6A

Junction temperature

Range of storage temperature

Data Sheet

Symbol

VCBO

VCEO

VEBO

IC

PC *2

Tj

Tstg

DTr1(NPN) DTr2(PNP) Unit

50

-50

V

50

-50

V

5

-5

V

100

-100

mA

150 (Total)*3

mW

300 (Total)*4

mW

150

°C

-55 to +150

°C

lElectrical characteristics(Ta = 25°C) <For DTr1(NPN)>

Parameter

Symbol

Collector-base breakdown voltage BVCBO

Collector-emitter breakdown voltage BVCEO

Emitter-base breakdown voltage

BVEBO

Collector cut-off current

ICBO

Emitter cut-off current

IEBO

Collector-emitter saturation voltage VCE(sat)

DC current gain

hFE

Input resistance

R1

Conditions

IC= 50mA

IC= 1mA

IE= 50mA

VCB = 50V

VEB = 4V

IC / IB= 5mA / 0.25mA

VCE= 5V, IC= 1mA

-

Transition frequency

fT *1

VCE = 10V, IE = -5mA

f = 100MHz

Min.

50

50

5

-

-

-

100

3.29

-

Typ.

-

-

-

-

-

-

300

4.7

250

Max.

-

-

-

500

500

300

600

6.11

-

Unit

V

nA

nA

mV

-

-

MHz

lElectrical characteristics(Ta = 25°C) <For DTr2(PNP)>

Parameter

Symbol

Conditions

Collector-base breakdown voltage BVCBO IC= -50mA

Collector-emitter breakdown voltage BVCEO IC= -1mA

Emitter-base breakdown voltage

BVEBO IE= -50mA

Collector cut-off current

ICBO VCB = -50V

Emitter cut-off current

IEBO VEB = -4V

Collector-emitter saturation voltage VCE(sat) IC / IB= -5mA / -0.25mA

DC current gain

hFE VCE= -5V, IC= -1mA

Input resistance

R1

-

Transition frequency

fT *1

VCE = -10V, IE = 5mA

f = 100MHz

*1 Characteristics of built-in transistor

*2 Each terminal mounted on a reference footprint

*3 120mW per element must not be exceeded.

*4 200mW per element must not be exceeded.

Min.

-50

-50

-5

-

-

-

100

3.29

-

Typ.

-

-

-

-

-

-

300

4.7

250

Max.

-

-

-

-500

-500

-300

600

6.11

-

Unit

V

nA

nA

mV

-

-

MHz

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2/7

2013.05 - Rev.B

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