EMD6(2013) 查看數據表（PDF） - ROHM Semiconductor

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EMD6
(Rev.:2013)

NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)

ROHM Semiconductor 

EMD6 / UMD6N / IMD6A

lElectrical characteristic curves(Ta = 25°C) <For DTr2(PNP)>

Data Sheet

Fig.1 Grounded emitter propagation

characteristics

-10

VCE= -5V

-1

-0.1

-0.01

Ta=100ºC

25ºC

-40ºC

-0.001

0

-0.5

-1

-1.5

-2

BASE TO EMITTER VOLTAGE : VBE [V]

Fig.2 Grounded emitter output

characteristics

-100

Ta=25ºC

-80

-60

-40

IB=

-500μA

-450μA

-400μA

-350μA

-300μA

-250μA

-200μA

-150μA

-20

-100μA

-50μA

0

0A

0

-2

-4

-6

-8

-10

COLLECTOR TO EMITTER

VOLTAGE : VCE [V]

Fig.3 DC Current gain

vs. Collector Current

Fig.4 Collector-emitter saturation voltage

vs. Collector Current

COLLECTOR CURRENT : IC [A]

COLLECTOR CURRENT : IC [A]

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4/7

2013.05 - Rev.B

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