SST25PF080B 查看數據表（PDF） - Microchip Technology

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SST25PF080B

8 Mbit 2.3-3.6V SPI Serial Flash

Microchip Technology 

SST25PF080B

5.0 ELECTRICAL SPECIFICATIONS

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-

mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-

tional operation of the device at these conditions or conditions greater than those defined in the operational

sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may

affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . .-2.0V to VDD+2.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. Output shorted for no more than one second. No more than one output shorted at a time.

TABLE 5-1:

Range

Commercial

OPERATING RANGE

Ambient Temp

0°C to +70°C

VDD

2.3-3.6V

TABLE 5-2: AC CONDITIONS OF TEST1

Input Rise/Fall Time

5ns

Output Load

CL = 30 pF

1. See Figures 5-5 and 5-6

TABLE 5-3: DC OPERATING CHARACTERISTICS

Limits

Symbol Parameter

Min Max Units Test Conditions

IDDR

IDDR3

IDDW

ISB

ILI

ILO

VIL

VIH

VOL

VOL2

VOH

Read Current

Read Current

Program and Erase Current

Standby Current

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output Low Voltage

Output High Voltage

12

20

30

20

1

1

0.7

0.7 VDD

0.2

0.4

VDD-0.2

mA CE#=0.1 VDD/0.9 VDD@33 MHz, SO=open

mA CE#=0.1 VDD/0.9 VDD@80 MHz, SO=open

mA CE#=VDD

µA CE#=VDD, VIN=VDD or VSS

µA VIN=GND to VDD, VDD=VDD Max

µA VOUT=GND to VDD, VDD=VDD Max

V VDD=VDD Min

V VDD=VDD Max

V IOL=100 µA, VDD=VDD Min

V IOL=1.6 mA, VDD=VDD Min

V IOH=-100 µA, VDD=VDD Min

TABLE 5-4:

Parameter

COUT1

CIN1

CAPACITANCE (TA = 25°C, F=1 MHZ, OTHER PINS OPEN)

Description

Test Condition

Output Pin Capacitance

Input Capacitance

VOUT = 0V

VIN = 0V

Maximum

12 pF

6 pF

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

 2012 Microchip Technology Inc.

DS25134A-page 19

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