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BA4560 查看數據表(PDF) - ROHM Semiconductor

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BA4560 Datasheet PDF : 4 Pages
1 2 3 4
Standard ICs
BA4560 / BA4560F / BA4560N
Internal circuit configuration
VCC
R1
Q5
– IN
+ IN
Q1
Q2
Q3
Q4
Q7
Q8
Q9
R5
Q6
Q10
Q13
Q11
R6
R7 R8
Q12
Q14
Q15
OUT
R2
VEE
R3
R4
R9
D
Absolute maximum ratings (Ta = 25°C)
Parameter
Limits
Symbol
Unit
BA4560 BA4560F BA4560N
Power supply voltage
Power dissipation
VCC
± 18
± 18
± 18
V
Pd
800
550
900
mW
Differential input voltage
VID
± VCC
V
Common-mode input voltage
VI
– VCC ~ VCC
V
Operating temperature
Topr
– 40 ~ + 85
°C
Storage temperature
Tstg
– 55 ~ + 125
°C
Refer to the Pd characteristics diagram. The values for the BA4560F are those when it is mounted on a glass
epoxy PCB (50mm × 50mm × 1.6mm).
Electrical characteristics (unless otherwise noted, Ta = 25°C, VCC = +15 V, VEE = -15 V)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input offset voltage
VIO
0.5
6.0
mV RS Ϲ 10k
Input offset current
IIO
5
200
nA
Input bias current
IB
50
500
nA
High-amplitude voltage gain
Common-mode input voltage
Maximum output voltage 1
AV
86
100
VICM
± 12
± 14
VOM1
± 12
± 14
dB RL м 2k, VO = ± 10V
V
V
RL м 10k
Maximum output voltage 2
VOM2
± 10
± 13
V
RL м 2k
Common-mode rejection ratio
CMRR
70
90
dB RS Ϲ 10k
Power supply voltage rejection ratio PSRR
30
150 µV / V RS Ϲ 10k
Slew rate
S. R.
4.0
V / µs AV = 1, RL = 2k
Input conversion noise voltage
Vn
2.2
µV
Gain band width product
GBW
10
MHz f = 10kHz
2

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