BAS125-05WE6327 查看數據表（PDF） - Infineon Technologies

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BAS125-05WE6327

Silicon Schottky Diodes

Infineon Technologies 

Silicon Schottky Diodes

• For low-loss, fast-recovery, meter protection,

bias isolation and clamping application

• Integrated diffused guard ring

• Low forward voltage

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

BAS125...

BAS125-04W

!

,

,



BAS125-05W

!

,

,



BAS125-06W

!

,

,



BAS125-07W

"

!

,

,



ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BAS125-04W

BAS125-05W

BAS125-06W

BAS125-07W

Package

SOT323

SOT323

SOT323

SOT343

Configuration

series

common cathode

common anode

parallel pair

LS(nH)

1.4

1.4

1.4

1.6

Marking

14s

15s

16s

17s

Maximum Ratings at TA = 25°C, unless otherwise specified

Parameter

Symbol

Diode reverse voltage

Forward current

Non-repetitive peak surge forward current

Total power dissipation

BAS125-04W, BAS125-06W, TS ≤ 84°C

BAS125-05W, TS ≤ 76°C

BAS125-07W, TS ≤ 96°C

VR

IF

I FSM

Ptot

Junction temperature

Tj

Storage temperature

Tstg

1Pb-containing package may be available upon special request

Value

25

100

500

250

250

250

150

-55 ... 150

Unit

V

mA

mW

°C

1

2007-04-19

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