BAT1705WE6327HTSA1 查看數據表（PDF） - Infineon Technologies

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BAT1705WE6327HTSA1

Silicon Schottky Diode

Infineon Technologies 

BAT17...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 10 µA

Reverse current

VR = 3 V

VR = 4 V

VR = 3 V, TA = 60 °C

V(BR)

IR

4

-

-V

µA

-

- 0.25

-

-

10

-

- 1.25

Forward voltage

IF = 0.1 mA

IF = 1 mA

IF = 10 mA

Forward voltage matching1)

IF = 1 mA

VF

∆ VF

mV

200 275 350

250 340 450

350 425 600

-

-

20

AC Characteristics

Diode capacitance

VR = 0 , f = 1 MHz

Differential forward resistance

IF = 5 mA, f = 10 kHz

CT

0.4 0.55 0.75 pF

RF

-

8

15 Ω

1∆VF is the difference between lowest and highest VF in multiple diode component.

3

2011-06-15

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