SBC817-16L(2016) 查看數據表（PDF） - ON Semiconductor

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SBC817-16L
(Rev.:2016)

General Purpose Transistors

ON Semiconductor 

BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L

TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L

300

150°C

VCE = 1 V

1

IC/IB = 10

200 25°C

100 −55°C

150°C

25°C

0.1

−55°C

0

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain vs. Collector

Current

1.1

1.0

IC/IB = 10

0.9

0.8

0.7

−55°C

25°C

150°C

0.6

0.5

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 3. Base Emitter Saturation Voltage vs.

Collector Current

0.01

0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

1.2

1.1 VCE = 5 V

1.0

0.9

−55°C

0.8

25°C

0.7

0.6

0.5

150°C

0.4

0.3

0.2

0.0001 0.001

0.01

0.1

1

IC, COLLECTOR CURRENT (A)

Figure 4. Base Emitter Voltage vs. Collector

Current

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