SBC817-40LT1G(2016) 查看數據表（PDF） - ON Semiconductor
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SBC817-40LT1G Datasheet PDF : 10 Pages
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BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L
TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L
500
150°C
400
300 25°C
200
−55°C
100
VCE = 1 V
1
IC/IB = 10
0.1
150°C
25°C
−55°C
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 8. DC Current Gain vs. Collector
Current
1.1
1.0
IC/IB = 10
0.9
−55°C
25°C
0.8
150°C
0.7
0.6
0.5
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5
150°C
0.4
0.3
0.2
0.0001 0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Figure 12. Current Gain Bandwidth Product
vs. Collector Current
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