BC857W-G 查看數據表（PDF） - ComChip

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BC857W-G

Small Signal Transistor

ComChip 

Small Signal Transistor

Electrical Characteristics (TA= 25 °C unless otherwise specified)

Parameter

Symbol Test Conditions

MIN

BC856W-G

-80

Collector-Base Breakdown Voltage

BC857W-G

VCBO IC = -10μA , IE=0

-50

BC858W-G

-30

BC856W-G

-65

Collector-Emitter Breakdown Voltage

BC857W-G

VCEO IC = -10mA , IB=0

-45

BC858W-G

-30

Emitter-Base Breakdown Voltage

VEBO IE = -1μA , IC=0

-5

Collector Cut-off Current

ICBO VCB= -30V , IE=0

DC Current Gain

BC856AW,857AW,858AW

BC856BW,857BW,858BW

BC857CW,858CW

125

hFE

VCE = -5V , IC= -2mA

220

420

Collector-Emitter Saturation Voltage

VCE(sat) IC =-100mA , IB=-5mA

Base-Emitter Saturation Voltage

Transition Frequency

Collector Capacitance

VBE(sat) IC =-100mA , IB=-5mA

VCE=-5V , IC=-10mA

fT

100

f=100MHZ

Cob

VCB =-10V , f=1MHZ

MAX Units

V

V

V

-15

nA

250

475

800

-0.65

V

-1.1

V

MHZ

4.5

pF

Company reserves the right to improve product design , functions and reliability without notice.

QW-BTR36

Comchip Technology CO., LTD.

REV:B

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