BCW68GL 查看數據表（PDF） - ON Semiconductor
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BCW68GL Datasheet PDF : 5 Pages
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BCW68GL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, VEB = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
−45
−
−
Vdc
V(BR)CES
−60
−
−
Vdc
V(BR)EBO
−5.0
−
−
Vdc
ICES
IEBO
−
−
−20 nAdc
−
−
−10 mAdc
−
−
−20 nAdc
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
−
120
−
400
160
−
−
60
−
−
VCE(sat)
−
−
−0.7
Vdc
VBE(sat)
−
−
−2.0
Vdc
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100
−
−
MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
−
18
pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
−
105
pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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