BF422G 查看數據表（PDF） - ON Semiconductor

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BF422G

High Voltage Transistors NPN Silicon

ON Semiconductor 

BF422

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

(IC = 25 mAdc, VCE = 20 Vdc)

Collector −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

Base −Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz)

Common Emitter Feedback Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Symbol

Min

Max

Unit

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

300

−

Vdc

300

−

Vdc

5.0

−

Vdc

−

0.01 mAdc

−

100 nAdc

hFE

VCE(sat)

VBE(sat)

50

−

−

−

0.5

Vdc

−

2.0

Vdc

fT

60

−

MHz

Cre

−

1.6

pF

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