BF422G 查看數據表（PDF） - ON Semiconductor

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BF422G

High Voltage Transistors NPN Silicon

ON Semiconductor 

120

100

80

60

40

20

0

0.1

100

10

1.0

0.1

0.1

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1

TJ = +125°C

BF422

VCE = 10 Vdc

25°C

-55°C

1.0

10

100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

Ceb @ 1MHz

Ccb @ 1MHz

1.0

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 2. Capacitance

80

70

60

50

40

30

TJ = 25°C

VCE = 20 V

20

f = 20 MHz

10

1000

1.0

2.0 3.0 5.0 7.0 10

20 30 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain − Bandwidth

1.0

10

100

IC, COLLECTOR CURRENT (mA)

Figure 4. ”ON” Voltages

VCE(sat) @ 25°C, IC/IB = 10

VCE(sat) @ 125°C, IC/IB = 10

VCE(sat) @ -55°C, IC/IB = 10

VBE(sat) @ 25°C, IC/IB = 10

VBE(sat) @ 125°C, IC/IB = 10

VBE(sat) @ -55°C, IC/IB = 10

VBE(on) @ 25°C, VCE = 10 V

VBE(on) @ 125°C, VCE = 10 V

VBE(on) @ -55°C, VCE = 10 V

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