VBP104S 查看數據表（PDF） - Vishay Semiconductors
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VBP104S Datasheet PDF : 8 Pages
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VBP104S, VBP104SR
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Temperature coefficient of Ik
Reverse light current
Angle of half sensitivity
IF = 50 mA
VF
IR = 100 μA, E = 0
V(BR)
60
VR = 10 V, E = 0
Iro
VR = 0 V, f = 1 MHz, E = 0
CD
VR = 3 V, f = 1 MHz, E = 0
CD
Ee = 1 mW/cm2, λ = 950 nm
Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
Ee = 1 mW/cm2, λ = 950 nm
Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira
25
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
λp
λ0.1
NEP
tr
Fall time
VR = 10 V, RL = 1 kΩ,
λ = 820 nm
tf
TYP.
1
2
48
17
350
- 2.6
32
0.1
35
± 65
940
430 to 1100
4 x 10-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√Hz
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
VR = 10 V
1
20
40
60
80
100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.4, 24-Aug-11
2
Document Number: 81170
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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