BP104SR(2018) 查看數據表（PDF） - OSRAM GmbH
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BP104SR Datasheet PDF : 13 Pages
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Version 1.4
Maximum Ratings (TA = 25 °C)
Parameter
Operating and storage temperature range
Reverse voltage
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics (TA = 25 °C)
Parameter
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V)
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of radiant sensitive area
Half angle
Dark current
(VR = 10 V)
Spectral sensitivity of the chip
(λ = 850 nm)
Quantum yield of the chip
(λ = 850 nm)
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
Short-circuit current
(Ev = 1000 lx, Std. Light A)
Rise and fall time
(VR = 5 V, RL = 50 Ω, λ = 850 nm)
Forward voltage
(IF = 100mA, Ee = 0)
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
Temperature coefficient of VO
Symbol
Top; Tstg
VR
Ptot
VESD
Values
-40 ... 100
20
150
2000
Unit
°C
V
mW
V
Symbol
(typ (min)) IP
(typ)
(typ)
λS max
λ10%
(typ)
(typ)
A
LxW
(typ)
ϕ
(typ (max)) IR
(typ)
Sλ typ
(typ)
η
(typ (min)) VO
(typ)
ISC
(typ)
tr, tf
(typ)
VF
(typ)
C0
(typ)
TCV
Values
55 (≥ 40)
Unit
µA
850
(typ) 400
... 1100
4.84
2.2 x 2.2
± 60
2 (≤ 30)
nm
nm
mm2
mm x
mm
°
nA
0.62
A/W
0.90
360 (≥280)
Electro
ns
/Photon
mV
50
µA
0.02
µs
1.3
V
48
pF
-2.6
mV / K
2018-02-23
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