VBP104FAS 查看數據表（PDF） - Vishay Semiconductors
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VBP104FAS Datasheet PDF : 8 Pages
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VBP104FAS, VBP104FASR
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
IF = 50 mA
VF
Breakdown voltage
IR = 100 μA, E = 0
V(BR)
60
Reverse dark current
VR = 10 V, E = 0
Iro
Diode capacitance
VR = 0 V, f = 1 MHz, E = 0
CD
VR = 3 V, f = 1 MHz, E = 0
CD
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
Reverse light current
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
25
Angle of half sensitivity
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
λp
λ0.5
NEP
tr
tf
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
1000
TYP.
1
2
48
17
350
-2.6
32
0.1
35
± 65
950
780 to 1050
4 x 10-14
100
100
MAX.
1.3
30
40
UNIT
V
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√Hz
ns
ns
100
10
1
20
94 8403
VR = 10 V
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
100
10
1
VR = 5 V
λ = 950 nm
0.1
0.01
0.1
1
10
94 8421
Ee - Irradiance (mW/cm2)
Fig. 3 - Reverse Light Current vs. Irradiance
1.4
1.2
VR = 5 V
λ = 950 nm
100
λ = 950 nm
1 mW/cm2
0.5 mW/cm2
1.0
10
0.2 mW/cm2
0.1 mW/cm2
0.8
0.05 mW/cm2
0.6
0
94 8409
20
40
60
80 100
Tamb - Ambient Temperature (°C)
1
0.1
1
10
100
94 8422
VR - Reverse Voltage (V)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Rev. 1.3, 24-Jun-14
2
Document Number: 81169
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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