BUK7505-30A,127 查看數據表（PDF） - NXP Semiconductors.
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BUK7505-30A,127 Datasheet PDF : 8 Pages
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Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7505-30A
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 75 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
MIN.
-
TYP.
-
MAX. UNIT
500 mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
1000
100
10
1
1
10
100
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
1
D=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
Zth / (K/W)
PD
tp
D
=
tp
T
T
t
0.001
0.00001
0.001 t/S 0.1
10
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
September 1999
3
Rev 1.100
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