BYD33JGP 查看數據表（PDF） - Vishay Semiconductors
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BYD33JGP Datasheet PDF : 4 Pages
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BYD33DGP thru BYD33MGP
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Parameter
Test condition
Symbol BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP Unit
Maximum
at 1.0 A(1)
VF
instantaneous forward
voltage
1.3
V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
TA = 150 °C
5.0
µA
200
Maximum reverse
IF = 0.5 A, IR = 1.0 A,
trr
150
250
300
ns
recovery time
Irr = 0.25 A
Typical junction
at 4.0 V, 1 MHz
CJ
capacitance
15
pF
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Parameter
Typical thermal resistance (1)
Symbol BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP Unit
RθJA
55
°C/W
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
1.0
Resistive or Inductive Load
0.75
30
TJ = TJ max.
8.3 ms Single Half Sine-Wave
20
0.5
10
0.25
0.375" (9.5mm) Lead Length
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88914
31-Aug-05
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