FDG6322C 查看數據表（PDF） - Fairchild Semiconductor
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FDG6322C Datasheet PDF : 9 Pages
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Typical Electrical Characteristics: N-Channel (continued)
6
I D = 0.22A
5
VDS = 5V
10V
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q g , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
15
Ciss
8
Coss
5
Crss
3 f = 1 MHz
VGS = 0 V
2
0.1
0.3
1
3
10
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1
0.3
RDS(ON) LIMIT
10ms
100ms
0.1
V GS = 4.5V
0.03 SINGLE PULSE
RθJA = 415 °C/W
TA = 25°C
1s
10s
DC
0.01
0.4
0.8
2
5
10
25 40
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
50
SINGLE PULSE
40
R θJA=415°C/W
TA= 25°C
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
200
SINGLE PULSE TIME (SEC)
Figure 10. Single Pulse Maximum Power
Dissipation.
FDG6322C Rev.F1
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