FDG6322C 查看數據表（PDF） - Fairchild Semiconductor
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FDG6322C Datasheet PDF : 9 Pages
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Typical Electrical Characteristics: P-Channel
1.2
VGS =-4.5V -3.0V
-2.7V
-2.5V
0.9
0.6
-2.0V
0.3
-1.5V
0
0
1
2
3
4
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2.5
2
VGS = -2.0V
-2.5V
1.5
-2.7V
-3.0V
-3.5V
1
-4.5V
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-I D , DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -0.41A
1.4 V GS = -4.5V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation
with Temperature.
5
I D = -0.2A
4
3
2
TJ = 125 ° C
1
25° C
0
1
2
3
4
5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
1
VDS = -5V
0.8
0.6
TJ = -55°C
25°C
125°C
0.4
0.2
0
0.5
1
1.5
2
2.5
3
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
1
VGS= 0V
0.1
0.01
TJ = 125°C
25°C
-55°C
0.001
0.0001
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG6322C Rev.F1
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