STS1DNC45 查看數據表（PDF） - STMicroelectronics
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STS1DNC45 Datasheet PDF : 8 Pages
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STS1DNC45
THERMAL DATA
Rthj-amb(#) Thermal Resistance Junction-ambient Max Single Operation
Thermal Resistance Junction-ambient Max Dual Operation
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
(#) When Mounted on FR4 board (Steady State)
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
62.5
78
150
–65 to 150
Max Value
0.4
30
°C/W
°C/W
°C
°C
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
450
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 0.5 A
Min. Typ. Max. Unit
2.3
3
3.7
V
4.1
4.5
Ω
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 25 V, ID = 0.5 A
VDS = 25 V, f = 1 MHz, VGS = 0
Min.
Typ.
1.1
160
27.5
4.7
Max.
Unit
S
pF
pF
pF
2/8
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