M4306N 查看數據表（PDF） - Zetex => Diodes
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M4306N Datasheet PDF : 3 Pages
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ZDM4306N
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold VGS(th) 1.3
Voltage
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain IDSS
Current
On-State Drain
Current(1)
ID(on)
12
100 nA VGS=± 20V, VDS=0V
10
µA VDS=60V, VGS=0
100 µA VDS=48V, VGS=0V, T=125°C(2)
A
VDS=10V, VGS=10V
Static Drain-Source
RDS(on)
On-State Resistance (1)
0.22 0.33 Ω
0.32 0.45 Ω
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Forward
gfs
700
Transconductance (1)(2)
mS VDS=25V,ID=3A
Input Capacitance (2)
Ciss
350 pF
Common Source Output Coss
Capacitance (2)
140 pF VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Crss
Capacitance (2)
30
pF
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
td(on)
tr
8
ns
VDD ≈25V, VGEN=10V, ID=3A
25
ns
Turn-Off Delay Time
(2)(3)
td(off)
30
ns
Fall Time (2)(3)
tf
16
ns
1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 322
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