PMBD7000 查看數據表（PDF） - NXP Semiconductors.
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PMBD7000 Datasheet PDF : 13 Pages
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NXP Semiconductors
PMBD7000
Double high-speed switching diode
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
[1] -
[2] -
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak
forward current
Ptot
total power dissipation
Per device
square wave
tp = 1 μs
tp = 1 ms
tp = 1 s
Tamb ≤ 25 °C
[3]
-
-
-
[1][4] -
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
Max Unit
100
V
100
V
215
mA
125
mA
450
mA
4
A
1
A
0.5
A
250
mW
150
°C
+150 °C
+150 °C
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj = 25 °C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-t)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
Conditions
in free air
Min Typ Max Unit
[1][2] -
-
500 K/W
-
-
360 K/W
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMBD7000
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 16 September 2010
© NXP B.V. 2010. All rights reserved.
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