LF353N 查看數據表（PDF） - Fairchild Semiconductor
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LF353N Datasheet PDF : 6 Pages
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LF353
Electrical Characteristics
(VCC =+15V, VEE= -15V, TA=25 °C, unless otherwise specified)
Parameter
Input Offset Voltage
Input Offset Voltage Drift
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
Output Voltage Swing
Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Power Supply Current
Slew Rate
Gain-Bandwidth Product
Channel Seperation
Equivalent Input Noise Voltage
Equivalent Input Noise Current
Symbol
Conditions
RS=10KΩ
VIO
0 °C≤TA≤+70 °C
∆VIO/∆T RS=10KΩ 0 °C≤TA≤+70 °C
IIO
0 °C≤TA≤+70 °C
IBIAS
0 °C≤TA≤+70 °C
RI
-
GV
VO(P-P) = ±10V
RL = 2KΩ 0 °C≤TA≤+70 °C
VO(P_P) RL = 10KΩ
VI(R)
-
CMRR RS ≤ 10KΩ
PSRR RS ≤ 10KΩ
ICC
-
SR GV = 1
GBW
-
CS
f = 1Hz ~ 20KHz
(Input referenced)
VNI
RS = 100Ω
f = 1KHz
Min.
-
-
-
-
-
-
-
-
25
15
±12
±11
70
70
-
-
-
-
-
INI f = 1KHz
-
Typ.
5.0
-
10
25
-
50
-
1012
100
-
±13.5
±15/-12
100
100
3.6
13
4
Max.
10
-
-
100
4
200
8
-
-
-
-
-
-
-
6.5
-
-
120
-
16
-
0.01
-
Unit
mV
-
µV/ °C
pA
nA
pA
nA
Ω
V/mV
-
V
V
dB
dB
mA
V/µS
MHz
dB
nV/
Hz
pA/
Hz
3
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