NDD04N62Z(2011) 查看數據表（PDF） - ON Semiconductor

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NDD04N62Z
(Rev.:2011)

N-Channel Power MOSFET 620 V, 2.0 Ω

ON Semiconductor 

NDF04N62Z, NDD04N62Z

−B−

F

Q

A

123

H

K

PACKAGE DIMENSIONS

TO−220FP

CASE 221D−03

ISSUE K

−T−

SEATING

PLANE

C

S

U

−Y−

G

J

N

R

L

D 3 PL

0.25 (0.010) M B M Y

IPAK

CASE 369D−01

ISSUE C

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW

STANDARD 221D-03.

INCHES

DIM MIN MAX

A 0.617 0.635

B 0.392 0.419

C 0.177 0.193

D 0.024 0.039

F 0.116 0.129

G 0.100 BSC

H 0.118 0.135

J 0.018 0.025

K 0.503 0.541

L 0.048 0.058

N 0.200 BSC

Q 0.122 0.138

R 0.099 0.117

S 0.092 0.113

U 0.239 0.271

STYLE 1:

PIN 1.

2.

3.

GATE

DRAIN

SOURCE

MILLIMETERS

MIN MAX

15.67 16.12

9.96 10.63

4.50 4.90

0.60 1.00

2.95 3.28

2.54 BSC

3.00 3.43

0.45 0.63

12.78 13.73

1.23 1.47

5.08 BSC

3.10 3.50

2.51 2.96

2.34 2.87

6.06 6.88

V

S

−T−

SEATING

PLANE

B

R

4

A

123

K

C

E

F

G

J

H

D 3 PL

0.13 (0.005) M T

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS

Z

DIM MIN MAX MIN MAX

A 0.235 0.245 5.97 6.35

B 0.250 0.265 6.35 6.73

C 0.086 0.094 2.19 2.38

D 0.027 0.035 0.69 0.88

E 0.018 0.023 0.46 0.58

F 0.037 0.045 0.94 1.14

G 0.090 BSC

2.29 BSC

H 0.034 0.040 0.87 1.01

J 0.018 0.023 0.46 0.58

K 0.350 0.380 8.89 9.65

R 0.180 0.215 4.45 5.45

S 0.025 0.040 0.63 1.01

V 0.035 0.050 0.89 1.27

Z 0.155 −−− 3.93 −−−

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

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