NDD04N62Z-1G 查看數據表（PDF） - ON Semiconductor
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NDD04N62Z-1G Datasheet PDF : 9 Pages
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NDF04N62Z, NDP04N62Z, NDD04N62Z
TYPICAL CHARACTERISTICS
10,000
VGS = 0 V
1000
TJ = 150°C
1200
1000
800
600
Ciss
VGS = 0 V
TJ = 25°C
100
TJ = 100°C
10
0
100 200 300 400 500 600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
vs. Voltage
20
400
15
QT
300
VDS
10
Qgs
Qgd
200
VGS
5
100
VDS = 310 V
TJ = 25°C
ID = 4 A
0
0
0 2 4 6 8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
4
VGS = 0 V
TJ = 25°C
3
2
1
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage vs. Current
400
Coss
200
Crss
0
0
50
100
150
200
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
1000
100
VDD = 310 V
ID = 4 A
VGS = 10 V
10
td(off)
tr
tf
td(on)
1
1
10
100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
vs. Gate Resistance
100
10
1 ms 100 ms 10 ms
10 ms
dc
1
VGS ≤ 30 V
Single Pulse
0.1
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
1
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area for NDF04N62Z
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4
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