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DF15005S-E3/45 查看數據表(PDF) - Vishay Semiconductors

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DF15005S-E3/45 Datasheet PDF : 4 Pages
1 2 3 4
DF15005S thru DF1510S
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
DF15005S
DF1501S
DF1502S
DF1504S
DF1506S
DF1508S
DF1510S
UNIT
Maximum
instantaneous forward 1.5 A
VF
voltage drop per diode
1.1
V
Maximum DC
reverse current at
rated DC blocking
voltage per diode
TA = 25 °C
TA = 125 °C
IR
5.0
500
µA
Typical junction
capacitance per diode (1)
CJ
25
pF
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL DF15005S DF1501S DF1502S DF1504S DF1506S DF1508S DF1510S UNIT
Typical thermal resistance (1)
RθJA
RθJL
40
15
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
DF1506S-E3/45
0.399
45
DF1506S-E3/77
0.399
77
BASE QUANTITY
50
1500
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.5
60 Hz
Resistive or
Inductive Load
1.0
0.5
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
60
TJ = 150 °C
Single Sine-Wave
50
40
30
20
10
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com
1296
For technical questions within your region, please contact one of the following: Document Number: 88570
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 16-Jul-08

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