TGF2021-08 查看數據表（PDF） - TriQuint Semiconductor

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TGF2021-08

DC - 12 GHz Discrete power pHEMT

TriQuint Semiconductor 

SYMBOL

Power Tuned:

Psat

PAE

Gain

ΓL 2/

TABLE III

RF CHARACTERIZATION TABLE 1/

(TA = 25 °C, Nominal)

Product Datasheet

August 7, 2007

TGF2021-08

PARAMETER

Vd = 10V

Idq = 600mA

Vd = 12V

Idq = 600mA

UNITS

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection coefficient

39.8

50

11

0.923 ∠ 176.3

40.5

48

11

0.921 ∠ 175.4

dBm

%

dB

-

Efficiency Tuned:

Psat

PAE

Gain

ΓL 2/

Saturated Output Power

Power Added Efficiency

Power Gain

Load Reflection coefficient

39

59

11.5

0.937 ∠ 173.7

39.7

55

11

0.934 ∠ 173.1

dBm

%

dB

-

1/ Values in this table are scaled from measurements taken from a 1mm unit pHEMT cell at 10 GHz

2/ Optimum load impedance for maximum power or maximum PAE at 10 GHz

TABLE IV

THERMAL INFORMATION

Parameter

θJC Thermal Resistance

(channel to backside of

carrier)

Test Conditions

Vd = 12 V

Idq = 600 mA

Pdiss = 7.2 W

TCH

(oC)

148

θJC

TM

(°C/W) (HRS)

10.8 1.2 E+6

Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo

Carrier at 70°C baseplate temperature.

3

TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev -

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