TGF2021-08 查看數據表（PDF） - TriQuint Semiconductor

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TGF2021-08

DC - 12 GHz Discrete power pHEMT

TriQuint Semiconductor 

Mechanical Drawing

Product Datasheet

August 7, 2007

TGF2021-08

2.418 [0.095]

2.323 [0.091]

2.105 [0.083]

17

8

9

2.122 [0.084]

1.849 [0.073] 7

10

1.593 [0.063] 6

11

1.337 [0.053] 5

GATE

1.081 [0.043] 4

12

DRAIN

13

0.825 [0.032] 3

14

0.569 [0.022] 2

15

0.313 [0.012] 1

16 0.297 [0.012]

0.096 [0.004]

18

0.000 [0.000]

Units: millimeters (inches)

Thickness: 0.100 (0.004)

Chip edge to bond pad dimensions are shown to center of bond pad

Chip size tolerance: +/- 0.051 (0.002)

GND IS BACKSIDE OF MMIC

Bond pads #1-8: (Gate) 0.090 x 0.090 (0.004 x 0.004)

Bond pads #9-16: (Drain) 0.090 x 0.090 (0.004 x 0.004)

Bond pad #17: (Vg*) 0.090 x 0.090 (0.004 x 0.004)

Bond pad #18: (Vg*) 0.090 x 0.090 (0.004 x 0.004)

*Note: Bond pads #17 & 18 are alternate gate pads

that can be used for paralleling FETs.

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during

handing, assembly and test.

7

TriQuint Semiconductor: Phone (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com www.triquint.com Rev -

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