FQB33N10TM 查看數據表（PDF） - Fairchild Semiconductor
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FQB33N10TM Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FQB33N10
Device
FQB33N10TM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
100 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.11
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
VDS = 80 V, TC = 150°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 16.5 A
VDS = 40 V, ID = 16.5 A
2.0 --
4.0
V
-- 0.040 0.052 Ω
--
22
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1150 1500 pF
-- 320 420
pF
--
62
80
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 33 A,
RG = 25 Ω
--
15
40
ns
-- 195 400
ns
--
80 170
ns
(Note 4) --
110
230
ns
VDS = 80 V, ID = 33 A,
--
38
51
nC
VGS = 10 V
-- 7.5
--
nC
(Note 4)
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 33 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 33 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 33A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
33
A
--
--
132
A
--
--
1.5
V
--
80
--
ns
-- 0.22
--
µC
©2000 Fairchild Semiconductor Corporation
2
FQB33N10 Rev. C1
www.fairchildsemi.com
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