FQPF9N25CYDTU 查看數據表（PDF） - Fairchild Semiconductor
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FQPF9N25CYDTU Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FQPF9N25C
FQPF9N25CT
Device
FQPF9N25C
FQPF9N25CT
Package
TO-220F
TO-220F
Reel Size
Tube
Tube
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Tape Width
N/A
N/A
Min
Typ
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 250 V, VGS = 0 V
VDS = 200 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
250
--
--
0.30
--
--
--
--
--
--
--
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 4.4 A
VDS = 40 V, ID = 4.4 A
2.0
--
--
0.35
--
7.0
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
545
--
115
--
45.5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 125 V, ID = 8.8 A,
VGS = 10 V , RG = 25 Ω
--
--
--
(Note 4)
--
VDS = 200 V, ID = 8.8 A,
--
VGS = 10 V
--
(Note 4)
--
15
85
90
65
26.5
3.5
13.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.8 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 8.8 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 5.9 mH, IAS = 8.8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 8.8 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
--
--
--
--
--
218
--
1.58
Quantity
50 units
50 units
Max Unit
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
4.0
V
0.43
Ω
--
S
710
pF
150
pF
60
pF
40
ns
180
ns
190
ns
140
ns
35
nC
--
nC
--
nC
8.8
A
35.2
A
1.5
V
--
ns
--
μC
©2004 Fairchild Semiconductor Corporation
2
FQPF9N25C / FQPF9N25CT Rev. C1
www.fairchildsemi.com
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