FQPF9N25CYDTU 查看數據表（PDF） - Fairchild Semiconductor
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FQPF9N25CYDTU Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.25
1.00
0.75
0.50
0.25
0.00
0
VGS = 10V
VGS = 20V
※ Note : TJ = 25℃
10
20
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
500
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
Ciss
Coss
Crss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 50V
VDS = 125V
8
VDS = 200V
6
4
2
※ Note : ID = 8.8A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
3
FQPF9N25C / FQPF9N25CT Rev. C1
www.fairchildsemi.com
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