TS616IDWT(2002) 查看數據表（PDF） - STMicroelectronics
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TS616IDWT Datasheet PDF : 27 Pages
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TS616
ELECTRICAL CHARACTERISTICS
VCC = ±6Volts, Rfb=910Ω,Tamb = 25°C (unless otherwise specified)
Note: As described on page 24 (table 71), the TS616 requires a 620Ω feedback resistor for an optimized bandwidth with a gain of 12B for
a 12V power supply. Nevertheless, due to production test constraints, the TS616 is tested with the same feedback resistor for 12V and 5V
power supplies (910Ω).
Symbol
Parameter
Test Condition
Min. Typ. Max. Unit
DC PERFORMANCE
Vio Input Offset Voltage
Tamb
Tmin. < Tamb < Tmax.
1
3.5
1.6
∆Vio Differential Input Offset Voltage
Tamb = 25°C
2.5
Iib+ Positive Input Bias Current
Tamb
Tmin. < Tamb < Tmax.
5
30
7.2
Iib- Negative Input Bias Current
Tamb
Tmin. < Tamb < Tmax.
3
15
3.1
ZIN+ Input(+) Impedance
82
ZIN- Input(-) Impedance
54
CIN+ Input(+) Capacitance
1
Common Mode Rejection Ratio
CMR
20 log (∆Vic/∆Vio)
∆Vic = ±4.5V
Tmin. < Tamb < Tmax.
58
64
62
Supply Voltage Rejection Ratio
SVR
20 log (∆Vcc/∆Vio)
∆Vcc=±2.5V to ±6V
Tmin. < Tamb < Tmax.
72
81
80
ICC Total Supply Current per Operator
No load
13.5 17
DYNAMIC PERFORMANCE and OUTPUT CHARACTERISTIC
ROL Open Loop Transimpedance
Vout = 7Vp-p, RL = 25Ω
Tmin. < Tamb. < Tmax.
5
13.5
5.7
-3dB Bandwidth
Small Signal Vout<20mVp
AV = 12dB, RL = 25Ω
25
40
BW Full Power Bandwidth
Large Signal Vout=3Vp
AV = 12dB, RL = 25Ω
26
Gain Flatness @ 0.1dB
Small Signal Vout<20mVp
AV = 12dB, RL = 25Ω
7
Tr Rise Time
Vout = 6Vp-p, AV = 12dB, RL
= 25Ω
10.6
Tf Fall Time
Vout = 6Vp-p, AV = 12dB, RL
= 25Ω
12.2
Ts Settling Time
Vout = 6Vp-p, AV = 12dB, RL
= 25Ω
50
SR Slew Rate
Vout = 6Vp-p, AV = 12dB, RL
= 25Ω
330
420
VOH High Level Output Voltage
RL=25Ω Connected to GND 4.8 5.05
VOL Low Level Output Voltage
RL=25Ω Connected to GND
-5.3 -5.1
Output Sink Current
Iout
Vout = -4Vp
Tmin. < Tamb < Tmax.
-320
-490
-395
Output Source Current
Vout = +4Vp
Tmin. < Tamb < Tmax.
330 420
370
mV
mV
µA
µA
kΩ
Ω
pF
dB
dB
mA
MΩ
MHz
MHz
ns
ns
ns
V/µs
V
V
mA
3/27
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