1N4448 查看數據表（PDF） - General Semiconductor

零件编号

产品描述 (功能)

生产厂家

1N4448

Small Signal Diodes

General Semiconductor 

1N4448

Small Signal Diodes

DO-35

max. ∅.079 (2.0)

Cathode

Mark

FEATURES

♦ Silicon Epitaxial Planar Diode

♦ Fast switching diode.

♦ This diode is also available in other

case styles including: the SOD-123

case with the type designation

1N4448W, the MiniMELF case with the

type designation LL4448, and the SOT23

case with the type designation IMBD4448.

max. ∅.020 (0.52)

Dimensions in inches and (millimeters)

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Value

Unit

Reverse Voltage

VR

75

V

Peak Reverse Voltage

VRM

100

V

Rectified Current (Average)

Half Wave Rectification with Resist. Load

at Tamb = 25 °C and f ≥ 50 Hz

I0

1501)

mA

Surge Forward Current at t < 1 s and Tj = 25 °C

IFSM

500

mA

Power Dissipation at Tamb = 25 °C

Ptot

5001)

mW

Junction Temperature

Tj

175

°C

Storage Temperature Range

TS

–65 to +175

°C

1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

4/98

Share Link: